PAM-XIAMEN

Infotech Co.

Professionalism based distributor...
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About us

Xiamen Powerway Advanced Material Co., Ltd was found in 1990 for introducing rich resource and high-tech material in China to overseas market. As one of the leading exporters of high-tech materials products in China, PWAM specializes in researching and supplying semiconductor substrate wafer material, especially for SiC wafer,in the end of 2004,we has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers,Which is applied in GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substates and develop large size substrates.PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze (VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.CdZnTe (CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray and γ-ray detection, laser optical modulation, high-performance solar cells and other high-tech fields. From 2001, PWAM offers commercial CZT wafers with high quality and very competitive price.PWAM has been ISO9001:2000 certified and awarded honours from China General Administration of Quality Supervision, Inspection and Quarantine. PWAM owns and shares four modern factories which can provide quite a big range of qualified products. Reliable product quality is always our first objective in serving our customers. Every order has to be handled through our rigorous quality system and customer's satisfaction is the only criterion to decide our products.PWAM's products are widely used all over the world. We are always dedicated to supplying every customer reliable products of high quality at very competitive prices. Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service. Our mission is to create the value for the society and the well-being life for the employee.

GaN Wafer

Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (galliumitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaN Templates
PAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire

GaN based LED Epitaxial Wafer
PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

GaN HEMT Epitaxial Wafer
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. Thanks to GaN technology, PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon, and AlGaN/GaN on sapphire template.

SiC Wafer

SiC Wafer Substrate
The company has a complete SiC(silicon carbide) wafer substrate production line integrating crystal growth, crystal processing, wafer processing, polishing, cleaning and testing. Nowadays we supply commercial 4H and 6H SiC wafers with semi insulation and conductivity in on-axis or off-axis, available size:5x5mm2,10x10mm2, 2”,3”,4”, 6” and 8″, breaking through key technologies such as defect suppression, seed crystal processing and rapid growth, promoting basic research and development related to silicon carbide epitaxy, devices, etc.

SiC Epitaxy
We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect

SiC Wafer Reclaim
PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

SiC Application
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs device

GaAs Wafer

Epi Wafer for Laser Diode
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

GaAs (Gallium Arsenide) Wafers
As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor C doped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, C doped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

GaAs Epiwafer
PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.

InP wafer

InP wafer
PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including low dope, N type or semi-insulating. The mobility of InP wafer is different in different type, low doped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

InAs wafer

InAs wafer
PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.

InSb wafer

InSb wafer
PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.

GaSb wafer

GaSb Wafer
PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Ge Wafer

Ge(Germanium) Single Crystals and Wafers
PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

CdZnTe
Wafer

CdZnTe (CZT) Wafer
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.

CZT Detector
PAM-XIAMEN supplies a series of CZT products, which are including detectors, modules, probes, systems, amplifiers, analyzers, supply and furnace.

Si wafer

12″ Prime Grade Silicon Wafer
PAM-XIAMEN offer 300mm bare silicon wafers (12 inch) in prime grade, n type or p type, and the 300mm silicon wafer thickness is 775±15. Compared to other silicon wafer suppliers, Powerway Wafer’s silicon wafer price is more competitive with higher quality. 300mm silicon wafers have a higher yield per wafer than pervious large diameter silicon wafers.

12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )
PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality

Epitaxial Silicon Wafer
Silicon Epitaxial Wafer(Epi Wafer) is a layer of epitaxial silicon single crystal deposited onto a single crystal silicon wafer(note: it is available to grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial silicon layer. It also can be used for thin film transistor.

Polished Wafer
PAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Wafer
Fabrication

Wafer Foundry Services
PAM-XIAMEN provides wafer foundry services with advanced semiconductor process technology and benefit from our upstream experiences of substrate and wafer expaxy, PAM-XIAMEN is to be the most advanced wafer technology and foundry services for fabless companies,IDMs and researchers.

816-Ho, 8th floor, 1-Dong, 8 Huinbawi-ro 59beon-gil, Incheon, 22371, Republic of korea
Tel : +82-32-612-8252 / Fax : +82-32-232-0431 / E-mail ; noniess@infotc.co.kr or noniess@naver.com
copyright 2023 infotech, All Rights Reserved.

개인정보취급방침

Freestanding GaN substratePAM-XIAMEN has established the manufacturing technology for freestanding (galliumitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaN TemplatesPAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire

GaN based LED Epitaxial WaferPAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

GaN HEMT Epitaxial WaferGallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. Thanks to GaN technology, PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon, and AlGaN/GaN on sapphire template.

SiC EpitaxyWe provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect

SiC Wafer Reclaim PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

SiC ApplicationDue to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs device

GaAs EpiwaferPAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.

GaSb WaferPAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

CdZnTe (CZT) WaferCadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.

CZT DetectorPAM-XIAMEN supplies a series of CZT products, which are including detectors, modules, probes, systems, amplifiers, analyzers, supply and furnace.

Polished WaferPAM-XIAMEN can offer polished wafer, n type or p type with orientation at <100>, <110> or <111>. FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)